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JPS5757416B2 |
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JPS57194263A |
PURPOSE: To enhance the sticking property and pickling performance of a pickling agent such as nitric acid, hydrofluoric acid, hydrochloric acid, sulfuric acid or a mixed acid thereof by adding colloidal silica to the pickling agent. CON...
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JPS5756209B2 |
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JPS57170535A |
PURPOSE:To produce a taper of preferable shape on the side surface of a thin Si film insularly remaining on a substrate by preparing the pressure ratio of oxygen to carbon tetrafluoride less than 0.3 when insularly drawing by dry etching...
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JPS5749116B2 |
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JPS5745306B2 |
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JPS5744748B2 |
The etchant composition contains water, an inorganic acid, polyvinyl alcohol in an amount sufficient to improve the uniformity of the etching, and transition metal ions in an amount sufficient to accelerate the etching. The acid is prefe...
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JPS57145099A |
PURPOSE:To effect the flat and smooth etching of the (100) surface of silicon, by the use of a three-component etching liquid composed of KOH, H2O and C2H5OH wherein the composition of said liquid falls within a specific quadrilateral in...
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JPS57135800A |
PURPOSE:When a crystal of compound containing gallium and arsenic is subjected to surface treatment, a sodium perborate solution is used to increase the efficiency and reproductivity of the treatment. CONSTITUTION:A crystal of compound c...
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JPS57125921A |
PURPOSE: To obtain substrates stuck with transparent conductive films in a short time without corrosion of producing devices, degradation of working environments, etc. by forming films of lower oxides consisting of indium oxide on substr...
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JPS5734201B2 |
A hydrogen peroxide concentrate is described containing up to 50% hydrogen peroxide, 1 to 3% of a soluble amino(methyl phosphonic acid) or a salt thereof, and 0.05 to 0.5% of phenol; the concentrate is useful in the preparation of highly...
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JPS5730138B2 |
Mixtures of water with water soluble and/or miscible halogenated compounds are used to pre-etch polysulfone and other polymers such as polyesters and polycarbonates to induce or improve adhesion of metals deposited by electroless plating...
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JPS57100907A |
PURPOSE: To enable the micro processing or pattern formation by etching on the surface of boron nitride, by emitting an ion or a chemically active seed produced by the electrical discharge of a reactive gas on the surface of boron nitrid...
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JPS5727179B2 |
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JPS5725505B2 |
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JPS5722885B2 |
A thin film integrated circuit consists of a first conductor of aluminum extended in any desired direction on an insulating substrate, an anodized film formed by anodization in a chromic acid solution at positions other than cross-connec...
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JPS5722994B2 |
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JPS5721586B2 |
Disclosed are compounds of formula I, +TR I in which THE R1's are the same and signify hydrogen or methyl, THE R2's are the same and signify hydrogen; C1-6alkyl; cyclohexyl, unsubstituted or substituted by up to three C1-6alkyl radicals;...
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JPS5720980B2 |
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JPS5767010A |
PURPOSE: To etch selectively and accurately an InP crystal covered with an ethcing mask by using a mixed aqueous soln. of concd. bromic acid and concd. nitric acid almost equal to each other in volume. CONSTITUTION: An etching mask 3 mad...
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JPS5761605A |
PURPOSE: To obtain an etching solution for crystal of III-V group compound not corrding a resist, by blending an alkali dichromate with sulfuric acid and hydrochloric acid. CONSTITUTION: An etching solution is obtained by blending 0.1 no...
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JPS5716153B2 |
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JPS5715150B2 |
After copper of printed circuit board lined with copper foil is etched with an acidic etching solution containing chloride ions, the resulting etching solution containing copper ions is placed in a cathode compartment partitioned with a ...
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JPS5751785A |
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JPS5747744A |
PURPOSE: To form a satin pattern having many protrusions and recesses of ≥ about 0.2mm on the surface of glass by immersing the glass in an etching soln. consisting of a specified amount of hydrofluoric acid, ammonium fluoride, hydroch...
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JPS575876B2 |
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JPS5649852B2 |
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JPS5645297B2 |
An etchant comprising a solution of hydrogen fluoride dissolved in an organic solvent such as glycerine. The solution is substantially free of unbound water and ammonium fluoride. The etchant is particularly suitable for removing silicon...
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JPS5642857B2 |
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JPS5642673B2 |
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JPS56126929A |
In an improved process for the etching of polysilicon substrates, a polysilicon substrate is exposed to plasmas of carbon tetrachloride, chlorinated gas, fluorinated gas or a gas capable of generating both chlorinated and fluorinated pla...
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JPS5641704B2 |
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JPS5640492B2 |
1526425 Etching PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 15 Oct 1975 [18 Oct 1974 (2)] 42222/75 Heading B6J [Also in Division C7] A layer of aluminium oxide is wholly or partially removed in an etchant comprising a solution of a fl...
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JPS5636223B2 |
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JPS5636225B2 |
The invention relates to a method of etching surfaces such as silicon dioxide, silicon nitride and silicon carbide by exposing the surface simultaneously to a noble gas halide such as fluorinated xenon compound and radiation such as elec...
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JPS5630534B2 |
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JPS5623144B2 |
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JPS5618944B2 |
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JPS5615736B2 |
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JPS5614611B2 |
A method is disclosed for forming holes and depressions in aluminum oxide, including its sapphire form and spinels by etching using AlN as a maskant. This method is featured by the epitaxial deposition of an AlN film on a sapphire body, ...
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JPS5614152B2 |
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JPS5615046A |
A method of etching a silicon-substrate, wherein a protective layer is formed on the substrate and serves as an etching mask, at least one some areas of the surface of the substrate. A layer of mineral glass, adhering to the substrate, i...
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JPS5613789A |
An optically transparent and electrically conductive film pattern on a substrate, e.g., an electrooptical display plate provided with a patterned transparent electrode layer, is prepared by a process in which an optically transparent lay...
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JPS563373B2 |
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JPS563372B2 |
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JPS56513B2 |
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JPS56520B2 |
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JPS55164827A |
PURPOSE: To remove easily and completely a photoresist film of cyclized rubber or other type, in a process of peeling the film by contacting an aromatic compound type peeling liq. to the film, by carrying out the process while irradiatin...
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JPS5550112B2 |
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JPS5544116B2 |
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