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JP3449365B2 |
To obtain a composition superior in wettability for wet etching and having all the characteristics of the conventional detergents. A composition for wet etching semiconductor is characterized by adding a detergent consisting of two compo...
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JP2003261699A |
To provide an etching solution suitable for etching of a liquid crystal polymer, and a method thereof.The etching solution comprises an alkali, a water-soluble aliphatic alcohol derivative having the boiling point of 100°C or higher, an...
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JP3446616B2 |
To provide a method for etching a silicon wafer, capable of reducing not only the roughness of the surface of the silicon wafer but also the irregularity of the surface, and to provide a liquid for etching the silicon wafer. This method ...
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JP2003257910A |
To provide a polishing method for a copper layer of a substrate by which a polishing speed can be increased, the thickness of the copper layer of the substrate is made uniform, the occurrence of scratches on the surface of the copper lay...
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JP3444491B2 |
To enable a polymer layer such as a resist layer on a substrate to be flattened by a method wherein the polymer layer is made very selective to a dielectric layer exposed to an abrasive composition to use when the polymer layer is chemic...
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JP3441875B2 |
To obtain a rust preventive compsn. having a good rust removing effect without having a possibility of attacking blank metals by using mild org. acids, weakly acidic inorg. acids, oxidizing agents and metals of specific standard electrod...
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JP2003234299A |
To obtain chamber cleaning gas and etching gas for a silicon containing film each containing perfluorocyclic ether having not less than two and not more than four oxygen atoms ether bonded to a carbon atom.The chamber cleaning gas and th...
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JP2003234316A |
To obtain an admixture for giving an etching solution, a polishing solution, or suspension that can be easily removed by rinsing by using high wetting force to a surface to be treated in a semiconductor industry.A fluoridation additive t...
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JP2003229392A |
To provide a method for manufacturing a silicon wafer in which the surface roughness and the overall flatness of a wafer can be prevented from deteriorating, and a silicon wafer manufactured by that method.The method for manufacturing a ...
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JP2003229365A |
To provide cleaning gas for removing unwanted deposits deposited on a device inner wall and a tool, etc., in a device which manufactures a thin film, a thick film, powder, a whisker, etc., using a CVD method, a sputtering method, a sol-g...
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JP2003218100A |
To provide cleaning gas for removing unnecessary matters deposited on the inner wall, and the like, of a thin film forming system, and the jigs, components, piping, and the like, of the system.The mixture cleaning gas composition contain...
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JP2003183652A |
To provide an etching agent having a sufficient etching selection ratio for a substrate silicon oxide film with a slight influence on a resist film when silicongermanium is wet etched and capable of collectively etching a cap Si film and...
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JP2003159090A |
To provide strains of the genus Pichia which are deficient in proteolytic activity, and to provide a means for generating such strains.The isolation and characterization of genes involved in proteolytic processing in species of the genus...
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JP3400855B2 |
PURPOSE: To prevent a crack from being caused in a polymer film by a method wherein an etching liquid which is composed of a specific hydrogen-containing fluorine-based solvent is used as an etching liquid. CONSTITUTION: The etching meth...
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JP3397501B2 |
PURPOSE: To form a highly reliable conductor film at a high polishing speed by forming a film composed mainly of a metal on a substrate having recessed sections on the surface to fill up the recessed sections and suppressing the occurren...
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JP2003105569A |
To provide a satisfactory surface roughening agent for a copper- containing metallic material, even when used for improving its adhesive properties with a stacking material, which can impart satisfactory adhesive properties, and to provi...
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JP2003510838A |
A method is provided for cleaning a surface of a semiconductor wafer after a CMP operation. In one example, an improved cleaning chemical (ICC) is applied to the surface of the wafer. The ICC is configured to transform a copper film on t...
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JP2003055277A |
To provide both a method for industrially and advantageously producing a high-purity hexafluorothane usable as an etching gas or a cleaning gas and the use thereof. This method for producing the hexafluoroethane comprises (1) a step of r...
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JP2003051496A |
To provide an ITO etching solution which will not etch molybdenum or cause deposit to stick. The etching solution is formed from a mixed solution of hydrochloric acid and nitric acid, and etches an indium tin oxide. An ITO pixel electrod...
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JP2003506895A |
A process is described for etching oxide films containing at least one bismuth-containing oxide, in particular a ferroelectric bismuth-containing mixed oxide. A substrate onto which at least one oxide film containing at least one bismuth...
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JP2003041385A |
To provide a polishing liquid for metal, which can be used for a chemical polishing method used for manufacturing a semiconductor circuit, is composed of various sorts of safe additives having little environmental load, and can inhibit d...
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JP2003037104A |
To obtain TFE gas suitable for dry etching. A supply system of tetrafluoroethylene gas to a dry etching unit is provided with a film separation system which separates a gas mixture of tetrafluoroethylene(TFE)/carbon dioxide (CO2) into ea...
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JP3366901B2 |
The invention provides a chemical-mechanical abrasive composition for use in semiconductor processing, which comprises an aqueous medium, an abrasive, and an abrasion accelerator. The abrasion accelerator mainly functions to enhance the ...
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JP2003008171A |
To etch thermoplastic polyimide effectively by using a chemical solution easy to treat, and to increase the production yield and workability in a circuit forming method, in which the thermoplastic polyimide layer is required.The thermopl...
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JP2002356464A |
To provide a high-purity aminopolycarboxylic acid decreased in undesired metal content, to provide its salt, and to provide a method for producing the high-purity aminopolycarboxylic acid or its salt. This high-purity aminopolycarboxylic...
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JP2002353205A |
To provide a method for fabricating a semiconductor device, by which high selectivity in etching is obtained, a wafer treatment equipment used for the method, and the semiconductor device that is obtained by the method. In the wafer trea...
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JP3353831B2 |
To speedily eliminate copper and to minimize the loss of copper in a patterned interconnected body without eliminating a metal layer and a dielectric layer at a lower side or corroding copper. The chemical - mechanical polishing(CMP) slu...
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JP2002335067A |
To realize metal resin bonding of high integrity bonding by texturing a swelling solvent composition and resin substance, desmearing the resin substance from a base, and removing the substances.The lactone swelling composition is used to...
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JP3345408B2 |
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JP3337622B2 |
An etchant for etching at least one of a titanium material and silicon oxide includes a mixed liquid of HCl, NH4Fand H2O. When the etchant has a NH4F/HCl molar ratio of less than one, only the titanium material is etched. When the etchan...
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JP2002299291A |
To provide a composition for polishing metal capable of polishing a metal film at a high speed even under low-load conditions and suppressing the occurrence of defects on a face to be polished such as scratch or dishing, etc., in a proce...
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JP2002299292A |
To provide a polishing composition capable of polishing a metal film at a high speed even under low-load conditions and suppressing the occurrence of defects on a face to be polished such as scratch, dishing or erosion, etc., in a proces...
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JP3333178B2 |
To acquire high purity metal oxide slurry narrow and uniform in particle size distribution and containing almost no huge particles of 1 μm or larger causing a μ-scratch on a polished surface. The generation of the huge particles (of 1 ...
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JP2002266088A |
To obtain a soft etching agent for copper clad laminates which permits the formation of printed circuit boards of high-density fine patterns, can provide conservation of costly copper, improves the wettability with solder, permits the us...
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JP2002530529A5 |
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JP2002530529A |
(57) [Summary] A process of metallizing a plastic surface in which the following process processes are performed one after another. The plastic surface is etched under mild conditions. The plastic surface is subsequently treated with a m...
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JP2002528903A |
This invention relates to a CMP slurry system for use in semiconductor manufacturing. The slurry system comprises two parts. The first part is a generic dispersion that only contains an abrasive and, optionally, a surfactant and a stabil...
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JP2002526943A |
A polishing liquid for components, preferably wafers, a process for producing a polishing liquid and a process for chemical mechanical polishing of components are provided. The polishing liquid has a polishing base liquid and an oxidizin...
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JP3309392B2 |
A wet-etching composition for semiconductors which is produced by adding a surfactant composed of an alkylsulfonic acid and an omega -hydrofluoro-alkylcarboxylic acid to a buffered hydrofluoric acid comprising hydrogen fluoride, ammonium...
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JP3301692B2 |
To obtain a rust preventive compsn. for blank metals which is capable of more effectively and safely removing the rust formed on the metals at ordinary temp. and is hard to cause the corrosion of blank metals by using a chelating agent a...
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JP2002520812A |
A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects...
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JP2002180044A |
To provide an etching liquid suitable for etching a thermoplastic polyimide resin.This etching liquid consists of a ≤4C aliphatic amino alcohol having amino group, or imino and hydroxy groups in its molecule (e.g. monoethanolamine) and...
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JP3286115B2 |
PURPOSE: To enable the removal of an unmodified epoxy resin without using concentrated sulfuric acid, chromic acid, etc., by using an alcohol solvent and water to adjust the composition of an etchant for a specific cured epoxy resin. CON...
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JP3286117B2 |
PURPOSE: To enable the removal of an unmodified epoxy resin without using concentrated sulfuric acid, chromic acid, etc., by using an amide solvent and an alcohol solution of an alkali metal compound to form an etchant for a specific cur...
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JP3284692B2 |
PURPOSE: To efficiently dissolve metallic copper without volatilizing harmful ammonium by using an aq. soln. contg. ammonium bicarbonate and a specified oxidizing agent as a solvent for metallic copper. CONSTITUTION: Metallic copper is d...
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JP2002134468A |
To selectively remove a sacrificial or a mask oxide film, without damaging metal film.This is liquid for removing a sacrificial or mask oxide film, where the selection ratio of THOX to an organic oxide film, a BPSG film, a BSG film, a lo...
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JP3276042B2 |
PURPOSE: To provide an electrolytically pretreating method of aluminum alloy capable of making a chromate coating film formed by cathodic electrolysis stable and excellent in adhesivity and improving corrosion resistance after coating. C...
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JP2002110597A |
To provide an aqueous dispersion for chemical mechanical polishing to polish a film or the like of a semiconductor device to be processed at a sufficient rate, suppress erosion and be useful in polishing a copper film.The aqueous dispers...
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JP3269611B2 |
To provide colloidal slurry used to polish an Ni plated base board by adding a ligand being a constitutive component of the surface to be polished to colloidal silica polishing slurry. For example, silica slurry (the silica content of 50...
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JP2002068741A |
To provide a method for manufacturing high purity cerium (IV) ammonium nitrate in high yield without needing any complicated and time-consuming process.Cerium hydroxide consisting of cerium (IV) and cerium (III), where cerium (IV) is 80%...
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