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JP2001068438A |
To provide a polishing composition for mirror finishing the surface of a compound semiconductor wafer which is not adverse to a work environment, with less environmental contamination, and which is excellent in stability and durability f...
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JP3145080B2 |
To provide an automatic etching device capable of uniformly etching the surface of glass for a thin-film transistor liquid crystal display. The etching solution tank 1 of the automatic etching device of the glass for the thin-film transi...
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JP2001023938A |
To reduce the sedimentation or aggregation of abrasive fine particles and the clogging of an abrasive cloth due to the abrasive fine articles as much as possible, by using an oxidizing agent and colloidal silica composition obtained by a...
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JP2001023940A |
To uniformly polish the surface containing a copper-based wiring layer, a barrier layer and an insulated layer, by using a slurry in which the polishing speed ratio between the copper-based wiring layer and the barrier layer, between the...
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JP2001023951A |
To obtain a method of manufacturing a semiconductor device, where a P+GaAs layer can be exposed surely.In the manufacturing method of a semiconductor device, which includes a GaAs layer and an InGaP layer formed on the GaAs layer, a firs...
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JP2001020087A |
To provide a water-based dispersion to be used for mechanochemical polishing of copper, having excellent stability and a high polishing rate, causing little scratches or the like, and useful for the production of a semiconductor device.T...
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JP2001011662A |
To provide a microetching agent capable of roughening the surface of stainless steel into a uniform rugged shape and to provide a surface roughening method.This microetching agent for stainless steel is composed of an aq. soln. contg., b...
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JP2001007061A |
To polish a surface without flaws at a high speed for making high planarity by comprising a low-molecular additive selected from among cerium oxide particle, dispersant, and cationic water-soluble organic low-molecule, in short a specifi...
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JP3117069B2 |
To obtain a cleaning method in which it is not required to precisely control a temperature and an HF-gas concentration by a method wherein a polymerized substance which is decomposed inside a reactor and on a jig, a component and a pipe ...
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JP2000336491A |
To obtain an etching agent for roughening the surface of nickel into a deep rugged shape exhibiting anchor effect in the case of being adhered with a resin by forming it into an aq. soln. contg. ferric chloride, hydrochloric acid and a h...
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JP2000315862A |
To improve the durability of a printed-circuit board and other electronic packaging devices, by bringing the wall part of the aperture of a resin being located on an electronic device substrate into contact with a swelling agent and an e...
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JP2000309889A |
To obtain a compsn. for microetching for increasing the surface area of a metallic surface and improving the adhesion of a metallic circuit to an insulating layer of a multilayer printed circuit board by allowing it to contain a proton s...
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JP2000282246A |
To reduce influence on the human body and environment, to facilitate treatability and to make better the adhesive performance between an insulating coating film and a metallic plating coating film without depending on Tg in the insulatin...
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JP2000260744A |
To improve etching controllability and the yield without reducing selectivity performance by setting the pH of a wet etching liquid of citric acid- hydrogen peroxide-ammonia-water system to a specific range in GaAs/AlGaAs hetero structur...
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JP2000252243A |
To condense a metal polishing liquid required from the viewpoint of storage, transportation, and housing, etc., and to form an embedded pattern of metal film with high reliability when polished with a diluted one. A metal polishing liqui...
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JP2000230196A |
To obtain a neutral type skid-proof detergent that comprises a surfactant having excellent biodegradability and has an antirust effect. This detergent comprises an aqueous mixed solution of a surfactant, a stabilizer, a neutral ammonium ...
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JP2000212776A |
To obtain an aqueous dispersion for mechanochemical polishing useful for a metallic layer such as a film to be worked in a semiconductor device. This aqueous dispersion contains an oxidizing agent such as hydrogen peroxide, peracetic aci...
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JP3065280B2 |
To provide a descaling pickling method using sulfuric acid or the descaling pickling solution mainly consisting of sulfuric acid for the steel, in particular, the heat-treated steel in which descaling is promoted, erosion of the base met...
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JP2000195850A |
To provide an etching liquid in which only Se or Se oxide film is liquated selectively and in a short time from the surface of ZnSe crystal at room temperature. For an etching liquid wherein sodium sulfide (Na2S) is mixed with water (H2O...
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JP2000192036A |
To enable a pattern with a distinct border to be formed on the surface of a metal oxide coating film mainly comprising silica by using an etching agent comprising a paste or a water solution containing a specified amount of an alkaline c...
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JP2000183047A |
To switch a slope cutting means from a V blade to etching so as to provide a semiconductor device at a lower manufacturing cost, by a method wherein a semiconductor substrate having a crystal structure of zinc blende is subjected to a sl...
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JP2000183046A |
To selectively etch an AlGaAs layer or a GaAs layer with respect to an InGaAs layer.A prescribed amount of citric acid trisodium hydrate is put into a beaker, and an ultrapure water and hydrogen peroxide water are added thereto. The solu...
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JP2000183003A |
To enable an etching-back process to be carried out in a short time by a method wherein polishing composition for copper metal comprises a first organic acid which reacts on copper, is non-soluble in water, and generates a copper complex...
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JP3053651B2 |
A method for removing scales formed on iron-based metal alloy containing Ni and/or Cr comprising contacting the metal alloy with a pickling solution containing nitrates and fluorides as essential components. The nitrates and fluorides us...
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JP2000164586A |
To provide an etchant which is capable of selectively etching a doped oxide film by a method wherein the etchant which contains hydrogen fluoride and has etching properties where ratio of an etching rate of boron silicate glass film or b...
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JP2000160008A |
To obtain a resin composition that forms an insulating resin film having a high degree of reliability by incorporating into the composition a base material resin comprising an imide resin and a filler comprising an aromatic compound havi...
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JP2000160367A |
To speed-up etching rate by incorporating an etching soln. contg. hydrogen fluoride and ammonium fluoride with a salt of the other strong acid as well.Into an aq. soln. contg. hydrogen fluoride and ammonium fluoride, the other salt is mo...
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JP2000151120A |
To provide a manufacturing method of a multilayer printed wiring board with excellent etching precision of interlayer connecting holes. In this manufacture of a multilayer printed wiring board using an epoxy resin curing compound contain...
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JP2000144109A |
To obtain a polishing agent slurry having a removal selectivity for tungsten to silicon nitride, improved in polishing rate for the tungsten and titanium and excellent in storage stability. This aqueous polishing agent slurry at pH 1-6 c...
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JP2000133631A |
To augment the corrosion rate of a silicon nitride by a method wherein a composite semiconductor device is made to corrode in a heating water solution containing a silicon-containing composition easily soluble in a phospholic acid and a ...
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JP2000133642A |
To pattern or remove effectively a Bi-based oxide ceramic by a method wherein the Bi-based oxide ceramic is etched with etching chemicals consisting of a fluoride or a nitric acid. Chemicals consisting of a fluoride in an acid medium is ...
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JP2000133643A |
To remove the secondary phase and the corrosion-loss phase generated in a PZT-based thin film. A PZT-based thin film is immersed in the mixed etching liquid of HF and acetic acid, and the surface of the PZT-based thin film is etched. The...
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JP2000109987A |
To obtain a chromium etching compsn. good in wattability to a chromium material in which a pattern is formed by a resist material, also low in foaming properties and moreover giving excellent etching effect by allowing it to contain ceri...
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JP2000086300A |
To improve the surface smoothness of a thin-sheet glass substrate and to ameliorate its quality by measuring the star-shaped patch as a local recess with a specified quality evaluation method and imparting the surface smoothness with the...
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JP2000082695A |
To provide a plasma etching method capable of reliably suppressing the occurrence of a phenomenon in which a copper film cannot be etched due to a halogen-containing gas and copper reacting before a plasma discharge in plasma etching, th...
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JP3014368B2 |
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JP2000056479A |
To provide a side wall removing liquid capable of easily removing the side wall occurring at the time of dry etching in semiconductor- manufacturing process from a semiconductor substrate without corroding a wiring material. The side wal...
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JP2000038674A |
To rapidly clean with high cleanness and without problem of causing global warming by using a gas containing CF3CFHOCF2H in order to remove unnecessary deposits accumulated in a device for forming thin films. Unnecessary deposits accumul...
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JP2000038580A |
To obtain an etching gas which is free from problems of the global warming, is excellent in etching into objects with intricate shapes, and enables good etching at a high speed by incorporating, into the same, a gas for removing predeter...
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JP2000038581A |
To obtain an etching gas which is free from problems of the global warming, is excellent in etching into objects with intricate shapes, and enables good etching at a high speed by selecting a gas contg. a gas comprising a compd. of the f...
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JP3007032B2 |
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JP2000034576A |
To obtain extremely excellent corrosion resistance and adhesion property to a coating material by preparing a metal surface treating agent which contains an Al-contg. inorg. oxide containing Al, O and other elements, metal salts except f...
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JP2000031132A |
To produce buffered hydrofluoric acid having a predetermined etching rate easily by diluting with wafer high etching rate buffered hydrofluoric acid in which the weight of hydrogen fluoride is specified. The concentration of hydrofluoric...
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JP2000031133A |
To effect highly selective etching and cleaning by causing a perovskite oxide film to come in contact with an etchant solution containing hydrogen peroxide and an arbitrarily selected complexing agent under mild ambient or near ambient c...
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JP2000017469A |
To improve the corrosion resistance of a welded stainless steel pipe used in piping before piping work. A produced welded stainless steel pipe is dipped in the hydrofluoric acid-nitric acid mixture contg. an org. compd. comprising the S,...
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JP2000017291A |
To provide a solubilizer which strongly dissolves scales of pipes and pots and is harmless to the materials and a human body. As the solubilizer, a fluid dissolving lactic acid at a high concentration is used. This substance as such or d...
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JPH11350170A |
To prevent the generation of a noxious gas at the time of dissolution treatment and to make iron or a ferroalloy excellent in surface smoothness without incorporating fluorine which causes the problem of environmental pollution by using ...
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JPH11335880A |
To enhance safety, to retard rusting after cleaning and to improve cleaning effect retentivity by removing rust from a metal with a cleaner comprising an aq. soln. of an amino acid or its deriv. An amino acid or its deriv. is mixed with ...
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JPH11330046A |
To form a contact hole by a self-alignment method without causing damages to an etching stopper film and degrading electrical characteristics thereof. An interlayer oxide film 11 is etched from the aperture 15 of a resist mask by a plasm...
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JP2981417B2 |
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