Title:
一次元ナノ構造の作製方法及びその方法により得られたナノ構造
Document Type and Number:
Japanese Patent JP2004524984
Kind Code:
A
Abstract:
According to the invention, parallel atomic lines (4) are formed on the surface of a substrate (2) in silicon carbide, and a material is deposited on this surface, able to be adsorbed selective fashion between the atomic lines and not on these atomic lines, the depositing of this material thereby generating strips (6,8) of this material between the atomic lines. The invention particularly applies to the fabrication of nanostructures having passivated or metallized strips.
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Inventors:
Marie D'Angelo
Victor Aristof
Vincent Dereek
Fabrice Semon
Patrick Skierchan
Victor Aristof
Vincent Dereek
Fabrice Semon
Patrick Skierchan
Application Number:
JP2002583317A
Publication Date:
August 19, 2004
Filing Date:
April 17, 2002
Export Citation:
Assignee:
COMPAGNIE GENERALE DES MATIERES NUCLEAIRES
International Classes:
B82B3/00; C30B23/02; (IPC1-7): B82B3/00
Attorney, Agent or Firm:
Masatake Shiga
Tadashi Takahashi
Takashi Watanabe
Masakazu Aoyama
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama
Shinya Mitsuhiro
Tadashi Takahashi
Takashi Watanabe
Masakazu Aoyama
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama
Shinya Mitsuhiro