Title:
面発光型半導体レーザの埋込トンネル接合の製造方法
Document Type and Number:
Japanese Patent JP2006508550
Kind Code:
A
Abstract:
Methods for producing buried tunnel junctions in surface-emitting semi-conductor lasers and devices incorporating the buried tunnel junctions are disclosed. The laser comprises an active zone containing a pn-junction, surrounded by a first n-doped semi-conductor layer and at least one p-doped semi-conductor layer. In addition to a tunnel junction on the p-side of the active zone, the tunnel junction borders a second n-doped semi-conductor layer. For burying the tunnel junction, the layer provided for the tunnel junction is removed laterally in a first step using material-selective etching until the desired diameter is achieved and then heated in a second step in a suitable atmosphere until the etched region is sealed by mass transport from at least one of the semi-conductor layers bordering the tunnel junction. This enables surface-emitting laser diodes to be produced in high yields with stabilization of the lateral single-mode operation and high performance.
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Inventors:
Aman, Marx-Christian
Application Number:
JP2005510225A
Publication Date:
March 09, 2006
Filing Date:
November 06, 2003
Export Citation:
Assignee:
Fertilus Game Beher
International Classes:
H01S5/18; H01S5/183; H01L21/205; H01L21/308; H01L33/00
Attorney, Agent or Firm:
Kato Asamichi
Kiuchi Uchida
Toshio Miyake
Kiuchi Uchida
Toshio Miyake