Title:
アニール装置
Document Type and Number:
Japanese Patent JP4096529
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an annealing device for processing an amorphous thin film provided on a substrate to a crystalline thin film at a low temperature using a simple process. SOLUTION: The annealing device is used for processing an amorphous thin film provided on a substrate to a crystalline thin film. It has a chamber for containing a substrate provided with an amorphous thin film, a means of introducing gas to a chamber, a means of evacuating the gas from a chamber and/or a vacuum pumping means, a heating means for heating amorphous thin film, a temperature control means for controlling the temperature of the amorphous thin film and a ultraviolet irradiation means for making an amorphous thin film irradiated with ultraviolet rays.
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Inventors:
Shigemi Otsu
Application Number:
JP2001196563A
Publication Date:
June 04, 2008
Filing Date:
June 28, 2001
Export Citation:
Assignee:
Fuji Xerox Co., Ltd
International Classes:
C23C14/58; B01J35/02; H01L21/20; H01L21/26
Domestic Patent References:
| JP200288474A | ||||
| JP2000275427A | ||||
| JP817731A | ||||
| JP10107216A | ||||
| JP11502067A | ||||
| JP2000285752A | ||||
| JP8102227A | ||||
| JP2002348664A | ||||
| JP200380066A |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda