表示デバイスの素子構造及びその製造方法

Title:

表示デバイスの素子構造及びその製造方法

Document Type and Number:

Japanese Patent JP4160110

Kind Code:

B2

Abstract:

This invention provides an Al-base alloy wiring material which, in a display device comprising a thin-film transistor, can realize direct junction also to a semiconductor layer such as an n⁺-Si layer. The Al-base alloy wiring material comprises nickel and boron incorporated in aluminum and is characterized by further comprising nitrogen (N). The nitrogen content is preferably not less than 2 OE10¹⁷ atoms/cm³ and less than9 OE#13;

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Inventors:

Hironari Urabe
Matsuura Yoshinori
Kubota Takashi

Application Number:

JP2008514993A

Publication Date:

October 01, 2008

Filing Date:

October 22, 2007

Export Citation:

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Assignee:

Mitsui Mining & Smelting Co., Ltd.

International Classes:

H01L21/3205; C22C21/00; C23C14/34; G02F1/1343; H01B1/02; H01L21/285; H01L23/52; H01L29/786

Domestic Patent References:

JP2004260194A

Attorney, Agent or Firm:

Patent business corporation Tanaka, Okazaki and Associates

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