Title:
電力用半導体装置
Document Type and Number:
Japanese Patent JP4393144
Kind Code:
B2
Abstract:
A power semiconductor device includes second layers of a second conductivity type disposed in a first layer of a first conductivity type. The second layers extend in a depth direction and are arrayed at intervals. Third layers of the second conductivity type are disposed respectively in contact with the second layers. Fourth layers of the first conductivity type are respectively formed in surfaces of the third layers. A gate electrode faces, through a first insulating film, a channel region, which is each of portions of the third layers interposed between the fourth layers and the first layer. An additional electrode is disposed on each of the second layers through a second insulating film, and faces, through each of the second layers, the first main electrode. The additional electrode is electrically connected to the gate electrode.
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Inventors:
Wataru Saito
Ichiro Omura
Satoshi Aida
Ichiro Omura
Satoshi Aida
Application Number:
JP2003316668A
Publication Date:
January 06, 2010
Filing Date:
September 09, 2003
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/78; H01L21/336; H01L21/76; H01L29/06; H01L29/74; H01L31/111; H01L29/417; H01L29/423
Domestic Patent References:
| JP2003101022A | ||||
| JP2000260984A | ||||
| JP2002076339A |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto