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Title:
磁気RAMの特性分析装置およびその分析方法
Document Type and Number:
Japanese Patent JP4440084
Kind Code:
B2
Abstract:
An analysis apparatus of MRAM and analysis method thereof are provided. The analysis apparatus includes: an MRAM mounting unit on which an MRAM is mounted; a magnetic-field applying unit which is positioned around the MRAM mounting unit and applies an external magnetic field to the MRAM mounted on the MRAM mounting unit; a probe card which is located in a position corresponding to the MRAM mounting unit; a matrix switch unit which designates a unit cell of the MRAM; a source measurement unit which applies an internal magnetic field to the unit cell of the MRAM or measures a resistance of the unit cell of the MRAM; and a computer unit which stores and analyzes data regarding the measured resistance of the each unit cell of the MRAM. The analysis apparatus and method can analyze characteristics of the unit cells with a relatively simple structure and at a fast speed.

Inventors:
Park Play
Yellow Jin Shun
Kim Tai
Application Number:
JP2004339098A
Publication Date:
March 24, 2010
Filing Date:
November 24, 2004
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
G01N27/72; G11C29/56; G01N27/00; G01N27/04; G11C11/15; G11C11/16; G11C29/44; G11C29/50; H01L21/8246; H01L27/105; H01L43/08; H01L43/12
Domestic Patent References:
JP2004146614A
JP2003332537A
JP2004241672A
JP2006128565A
JP2007514256A
JP2007513446A
JP2005150303A
JP2996940B2
JP2003133530A
JP9016921A
JP2002286824A
JP6349027A
JP2004301548A
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro