Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4903374
Kind Code:
B2
Abstract:
A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.
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Inventors:
Yoshiaki Oku
Yuji Fujii
Kazuo Takamura
Yuji Fujii
Kazuo Takamura
Application Number:
JP2004255463A
Publication Date:
March 28, 2012
Filing Date:
September 02, 2004
Export Citation:
Assignee:
ROHM Co., Ltd.
ULVAC, Inc.
Mitsui Chemicals, Inc.
ULVAC, Inc.
Mitsui Chemicals, Inc.
International Classes:
H01L21/768; H01L23/522
Domestic Patent References:
| JP2004511896A | ||||
| JP2001118842A | ||||
| JP2003282698A | ||||
| JP2000294634A |
Foreign References:
| WO2003028097A1 | ||||
| WO2004026765A1 | ||||
| WO2003077032A1 |
Attorney, Agent or Firm:
Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa
Hironori Honda
Toshimitsu Ichikawa