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Title:
可変降伏特性ダイオード
Document Type and Number:
Japanese Patent JP5085530
Kind Code:
B2
Abstract:
A memory cell made of at least two electrodes with a controllably conductive media between the at least two electrodes is disclosed. The controllably conductive media includes a passive layer made of super ionic material and an active layer. When an external stimuli, such as an applied electric field, is imposed upon the first and second electrode, ions move and dope and/or de-dope the polymer. The applied external stimuli used to dope the polymer is larger than an applied external stimuli to operate the memory cell. The polymer functions as a variable breakdown characteristic diode with electrical characteristics which are a consequence of the doping degree. The memory element may have a current limited read signal. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices such as computers, hand-held electronic devices and memory devices containing the memory cell(s) are also disclosed.

Inventors:
Gone, David
Bill, Colin S
Kaza, Swallow
Application Number:
JP2008503123A
Publication Date:
November 28, 2012
Filing Date:
March 22, 2006
Export Citation:
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Assignee:
Spansion LLC
International Classes:
H01L27/10; H01L21/329; H01L27/28; H01L29/861; H01L29/866; H01L29/868; H01L49/00; H01L51/05; H01L51/30
Domestic Patent References:
JP2006505939A
JP2007519220A
JP2155263A
Foreign References:
US20040238864
WO2004042738A1
US20030053350
US20040026714
WO2005011014A1
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Nobuo Arakawa



 
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