半導体装置の製造方法 - Renesas Electronics Corporation

Title:

半導体装置の製造方法

Document Type and Number:

Japanese Patent JP5269924

Kind Code:

B2

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Inventors:

Takuji Matsumoto
Toshiaki Iwamatsu
Yuichi Hirano

Application Number:

JP2011015269A

Publication Date:

August 21, 2013

Filing Date:

January 27, 2011

Export Citation:

Assignee:

Renesas Electronics Corporation

International Classes:

H01L29/786; H01L21/336; H01L21/76; H01L21/762; H01L21/8234; H01L27/08; H01L27/088

Domestic Patent References:

Attorney, Agent or Firm:

Yoshitake Hidetoshi
Takahiro Arita

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