Title:
磁気抵抗素子、その製造方法、及び、半導体記憶装置
Document Type and Number:
Japanese Patent JP5691551
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To further increase the thermal stability index Δ of a magnetic resistance element by means of stress control concerning a magnetic resistance element and its manufacturing method and a semiconductor storage device.SOLUTION: A magnetoresistance effect element includes an antiferromagnetic layer, a pinned layer, a tunnel insulation film, a free layer, a cap layer, an etching stopper film, a hard mask and an upper electrode which are all formed on a lower electrode in that order from the lower electrode side and an insulation film formed on at least a side face of the free layer, characterized in that a product of stress of the etching stopper film and magnetostriction constant of the free layer is made to be negative.
Inventors:
Range Yoshihisa
Application Number:
JP2011011546A
Publication Date:
April 01, 2015
Filing Date:
January 24, 2011
Export Citation:
Assignee:
Fujitsu Semiconductor Limited
International Classes:
H01L21/8246; H01L27/105; H01L43/08
Domestic Patent References:
| JP2009212323A | ||||
| JP2007158369A | ||||
| JP2006128453A |
Foreign References:
| WO2006054588A1 |
Attorney, Agent or Firm:
Kenji Doi
Hayashi Tsunetoku
Shoji Kashiwaya
Koichi Watanabe
Manabe Kiyoshi
Toshiro Ito
Hayashi Tsunetoku
Shoji Kashiwaya
Koichi Watanabe
Manabe Kiyoshi
Toshiro Ito