Title:
エッチング方法
Document Type and Number:
Japanese Patent JP6504989
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an etching method.SOLUTION: An etching method according to the embodiment, comprises: a first step of creating a plasma of a first processing gas including a fluorocarbon gas and a hydrofluorocarbon gas in a processing container of a plasma processing device; and a second step of creating the plasma of a second processing gas including the hydrofluorocarbon gas and a nitrogen gas in the processing container. In this method, a plurality of sequences including the first and second steps is performed. In this method, the plasma is subsequently created in an execution period of the first step and the second step. In the second step, a ration of hydrogen gas flowing amount to a second processing gas flowing amount is set to a lower ration in the period just before the execution period of first step and the period just after the execution period of first step.SELECTED DRAWING: Figure 1
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Inventors:
Yusuke Saito
Hiroshi Ichikawa Exhibition
Isao Tabusa
Hiroshi Ichikawa Exhibition
Isao Tabusa
Application Number:
JP2015207301A
Publication Date:
April 24, 2019
Filing Date:
October 21, 2015
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; H01L21/336; H01L21/768; H01L23/532; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP2015043386A | ||||
| JP2013239513A | ||||
| JP201422729A |
Foreign References:
| WO2014069559A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Yoshiki Kuroki
Junji Kashiwaoka