Title:
プラズマ制御装置
Document Type and Number:
Japanese Patent JP6510679
Kind Code:
B2
Abstract:
[Problem to be Solved] The present invention has an objective to provide a plasma control apparatus that can perform processing using plasma with stability and can perform impedance matching between a power source unit and the plasma at high speed. [Solution] A plasma control apparatus 100 includes a power source unit 1, a resonance producing unit 2, and a voltmeter 5. The resonance producing unit 2 includes an LC circuit formed by a coil L1 and a capacitor C1 connected to each other, and a sensor S2 configured to detect a phase difference between current flowing in and voltage applied to the LC circuit, and the capacitor C1 of the LC circuit has a capacitance larger than an expected capacitance of the plasma P. The power source unit 1 is configured to control the magnitude of radio-frequency power to be supplied in such a manner as to bring the voltage measured with the voltmeter 5 close to a set voltage as a target, and controls the frequency of the radio-frequency power to be supplied in such a manner as to minimize the phase difference detected with the sensor S2.
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Inventors:
Toshiyasu Hayami
Ryusuke Fujii
Ryusuke Fujii
Application Number:
JP2017562924A
Publication Date:
May 08, 2019
Filing Date:
January 20, 2017
Export Citation:
Assignee:
spp Technologies Co., Ltd.
International Classes:
H05H1/46; H01L21/3065
Domestic Patent References:
| JP2002151429A | ||||
| JP2001338917A | ||||
| JP2003077893A | ||||
| JP4212414A | ||||
| JP9082495A |
Attorney, Agent or Firm:
Makoto International Patent Office