【発明の名称】ホトレジスト組成物

Japanese Patent JPS6057584

B2

A photoresist composition comprising a cyclized product obtained by contacting a conjugated diene polymer or copolymer having unsaturations in the main chain or side chains with a fluorine-containing substituted sulfonic acid compound represented by the formula: CFnH3-nSO3R or CFnH3-nSO2X wherein R is hydrogen, alkyl or CFnH3-nSO2, X is halogen, and n is 1, 2 or 3, in an inert solvent, and a photosensitive crosslinking agent soluble in an organic solvent. The resist pattern obtained from said composition has excellent heat resistance. Also, when a silicon oxide film having said resist pattern is etched, the number of pinholes formed is very small.

JP6772992	Resist material and pattern formation method
WO/1996/008751	PHOTOLITHOGRAPHIC METHOD OF PRODUCING STRUCTURAL FEATURES
WO/2010/095746	COMPOUNDS, FLUORINE-CONTAINING POLYMERS, AND RADIATION -SENSITIVE RESIN COMPOSITIONS

KAMOSHITA YOICHI
HARITA YOSHUKI
HARADA TOKO

JP5069479A

December 16, 1985

April 24, 1979

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JAPAN SYNTHETIC RUBBER CO LTD

G03F7/039; C08F8/00; C08F8/34; C08F290/00; C08F299/00; G03C1/00; G03F7/008; G03F7/012; G03F7/038; H05K3/00; (IPC1-7): G03C1/71; G03C1/00; G03F7/08

Okuyama Nao

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