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Title:
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF FILM FOR IMPROVING VERTICAL ETCHING PERFORMANCE IN 3D NAND MEMORY DEVICE
Document Type and Number:
Japanese Patent JP2016197719
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a laminated film including an opening of the high-aspect-ratio, and also to provide a method for forming the same.SOLUTION: Various characteristics (for example, refractive index, film stress, and dopant concentration in a film) of a plasma enhanced chemical vapor deposition (PECVD) film (for example, silicon nitride) just after deposition are divided into grades, thereby capable of filling a difference in change between both dry etching speed and wet etching speed and attaining a more uniform etching shape.SELECTED DRAWING: Figure 3C

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Inventors:
PRAKET P JHA
KO ALLEN
HAN XINHAI
THOMAS JONGWAN KWON
KIM BOK HOEN
KIL BYUNG HO
KIM RYEUN
KIM SANG HYUK
Application Number:
JP2016063410A
Publication Date:
November 24, 2016
Filing Date:
March 28, 2016
Export Citation:
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Assignee:
APPLIED MATERIALS INC
International Classes:
H01L21/8247; H01L21/316; H01L21/318; H01L21/336; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
JP2012174961A2012-09-10
JP2012151187A2012-08-09
JPH0336769A1991-02-18
JP2016529740A2016-09-23
Foreign References:
US20140357064A12014-12-04
WO2015035381A12015-03-12
US20120211821A12012-08-23
US20120184078A12012-07-19
US20160307764A12016-10-20
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation



 
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