Al-Ni-La SYSTEM Al-BASED ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME

Japanese Patent JP2008127624

A

To provide a technique where splashes generated upon film deposition using an Al-Ni-La system Al-based alloy sputtering target comprising Ni and La can be reduced.

The invention relates to an Al-Ni-La system Al-based alloy sputtering target comprising Ni and La, wherein, when a section from (1/4)t to (3/4)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2,000 times, (1) a total area of an Al-Ni system intermetallic compound having an average particle diameter of 0.3 to 3 m with respect to a total area of the entire Al-Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al-Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al-La system intermetallic compound having an average particle diameter of 0.2 to 2 m with respect to a total area of the entire Al-La system intermetallic compound is 70% or more in terms of an area fraction, the Al-La system intermetallic compound being mainly composed of Al and La.

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TOKUHIRA MASAYA
TAKAGI KATSUHISA
KUGIMIYA TOSHIHIRO
YONEDA YOICHIRO
GOTO YASUSHI

JP2006313506A

June 05, 2008

November 20, 2006

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KOBELCO KAKEN KK
KOBE STEEL LTD

C23C14/34; B22F3/115; B22F3/15; B22F3/24; C22C21/00

Kyuichi Ueki
Tadashi Sugakawa
Osamu Futakuchi
Hiroaki Ito

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