PURPOSE: To reduce the volume of a photocurrent because of the thin film thickness of an amorphous Si film by a method wherein an a-Si film is formed with a protrusion built therein so that a region thereof to be exposed to a light beam coming out of a substrate rear side may be formed thin.
CONSTITUTION: An a-Si layer 4 is formed, provided with a protrusion. That is, Cr is deposited by spattering on a glass substrate 1 for the formation of a gate electrode 2. Next, an SiN film 3 is formed by plasma CVD, and then a non-dope a-Si layer 4 is formed, in that order, in contact with each other. The a-Si layer 4 is subjected to photoetching or the like whereby the region for a channel upper section is formed thick, and the region for source.drain electrodes thin. This design, with the region of the a-Si layer 4 to be exposed to a light beam coming out of the substrate rear surface being formed thin, a photocurrent may be reduced in volume.
TSUTSUI KEN
TANAKA YASUO
KANEKO YOSHIYUKI
| JPS59163868A | 1984-09-14 | |||
| JPS6439065A | 1989-02-09 |