To provide an amplification-type solid-state image pickup device capable of reducing image quality deterioration.
The amplification-type solid state image pickup-device comprises at least a photoreceiver unit 10 which is formed by one-dimensionally or two-dimensionally disposing on a semiconductor substrate 7 a plurality of pixels that convert incident light into a signal charge, and output an electrical signal according to the amount of signal charge; reading means for sequentially reading electrical signals from each of the plurality of pixels; a noise removing circuit 11 for reducing aliases of the electrical signals read by the reading means; and a first shield layer 1 disposed on the upper part of the photoreceiver unit 10 for restricting the entrance of light into parts other than a photoelectric conversion unit 10a of the pixel. A second light shield layer 2 for restricting the light entering the noise removing circuit 11 is further provided on the upper part of the noise removing circuit 11.
| JPS62230047 | MANUFACTURE OF IMAGE SENSOR |
| JP2013243781 | IMAGE SENSOR AND CONTROL METHOD THEREOF AND CAMERA |
| JPH07106624 | FABRICATION OF THIN FILM ELEMENT |
MASUYAMA MASAYUKI
INAGAKI MAKOTO
| JP2000150848A | 2000-05-30 | |||
| JP2000311997A | 2000-11-07 | |||
| JP2004064410A | 2004-02-26 | |||
| JPH03181169A | 1991-08-07 | |||
| JP2001015725A | 2001-01-19 | |||
| JPS6185860A | 1986-05-01 |
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