To reduce the cost of a crucible for an apparatus for melting a sapphire powder in the crucible by high frequency induction heating, and pulling and growing a sapphire single crystal.

The apparatus has a cylindrical heating chamber 60 provided in a cylindrical chamber, a heating coil arranged at the outer periphery of the heating chamber 60, the crucible 69 provided inside the heating chamber 60, an after-heater 76 provided above the crucible 69, and the high frequency electric source for supplying a high frequency current to the heating coil, wherein the sapphire powder 57 is melted by heating the crucible to a high temperature by the heating coil to obtain solution, the solution is brought into contact with a seed and pulled and the sapphire single crystal is grown. Further in the apparatus, the crucible 69 is formed from molybdenum, tungsten, or a mixture of them, the heating chamber 60 is made of a carbon felt forming member, and a plurality of grooves 65 are formed in the circumferential surface of cylindrical parts 61, 62, in longitudinal direction, of the heating chamber.