To provide a method for epitaxially forming a thin oxide film, such as an intermediate layer or a superconductive layer, by removing the oxidized layer from the surface of an oriented metallic substrate without fail and keeping the biaxial orientability of the oriented metallic substrate.
The method comprises forming a thin oxide film (e.g. an intermediate layer 2) on an oriented metallic substrate 1 and comprises the step of heat-treating the oriented metallic substrate in a reducing atmosphere just before the formation of the thin oxide film. Alternatively, the method comprises forming a thin oxide film (e.g. an intermediate layer 2) and comprises the step of previously heat-treating the oriented metallic substrate 1 in a reducing atmosphere and the step of heat-treating the oriented metallic substrate just before the formation of a thin oxide film in a reducing atmosphere.
DAIMATSU KAZUYA
MOKURA SHIYUUJI
KONISHI MASAYA
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
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