Title:
BIPOLAR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2015088699
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a bipolar semiconductor device capable of reducing switching loss and suppressing increase in steady loss.SOLUTION: In an SiC diode 20, at a second semiconductor layer part 25A of thickness less than 100nm (for example 50nm), a third impurity concentration (for example, 1×10cm) being different by at least one digit from an acceptor density 1×10cm, which is a second impurity concentration, reaches acceptor density 1×10cm. At the second semiconductor layer part 25A, a discontinuous growth surface that abruptly changes in impurity concentration is formed. The discontinuous growth surface becomes a re-coupling promotion surface that promotes re-coupling of carrier, for reducing switching loss, and when compared with a case in which a pn junction interface is a discontinuous growth surface, a carrier injection efficiency into a drift layer 23 is kept high, suppressing increase in steady loss.
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Inventors:
ITSUMI TETSURO
NAKAYAMA KOJI
ASANO KATSUNORI
TSUCHIDA SHUICHI
MIYAZAWA TETSUYA
NAKAYAMA KOJI
ASANO KATSUNORI
TSUCHIDA SHUICHI
MIYAZAWA TETSUYA
Application Number:
JP2013228449A
Publication Date:
May 07, 2015
Filing Date:
November 01, 2013
Export Citation:
Assignee:
KANSAI ELECTRIC POWER CO
CENTRAL RES INST ELECT
CENTRAL RES INST ELECT
International Classes:
H01L29/861; H01L21/205; H01L21/331; H01L21/336; H01L29/06; H01L29/12; H01L29/161; H01L29/73; H01L29/739; H01L29/744; H01L29/78; H01L29/868
Domestic Patent References:
| JPH1074959A | 1998-03-17 | |||
| JP2012033618A | 2012-02-16 | |||
| JPH04291765A | 1992-10-15 | |||
| JP2012204541A | 2012-10-22 | |||
| JPH04233232A | 1992-08-21 | |||
| JP2006040929A | 2006-02-09 |
Attorney, Agent or Firm:
Mitsuo Tanaka
Hiroshi Yamazaki
Hiroshi Yamazaki