PURPOSE: To obtain the voltage of power supply voltage or more by the small number of elements by using an E/D type inverter in which the load side is formed in a depletion type transistor and the drive side in an enhancement type transistor.

CONSTITUTION: Two pairs of E/D inverters in which load-side depletion type transistors Q2, Q5 and drive side enhancement type transistors Q3, Q6 ar combined are connected so that the two load-side transistors Q2 and Q5 are driven by an output N2 from the first inverter. A diode element Q1 is connected between the first load-side transistor Q2 and a power supply Vcc. A node N1 for the first inverter and an output N3 from the second inverter are connected by a capacitance Q4 for boosting trap, both drive-side transistors Q3 and Q6 are controlled by a common input IN, and boosting voltage is acquired from the output N2 from the first inverter.