To improve working precision and moreover to reduce thermal effect to devices such as a LSI in the case of working a semiconductor wafer or the like.
In this working method, a crack formed in the working start point of a material is guided with thermal stress by irradiation generating with the application of the heat source of a laser beam or the like along a predetermined splitting line, thereby splitting the material. In this case, plural heat sources Df and (f) having respectively different diameters each other are simultaneously applied to a position being the forward end of the crack (c) on the predetermined splitting line L of a material to be worked. Whereby, the temperature distribution having a steep grade in the vicinity of the crack end is formed without rising the power density of the heat source.
JP2004174529 | LASER BEAM WELDING EQUIPMENT |
JP6834683 | Sensor manufacturing system and sensor manufacturing method |
JPS59167507 | [Title of the device] Laser beam machine |
OKIYAMA TOSHIHIRO
SHIRAHAMA HIDEYUKI
OONITA EISHIN
SUENAGA TOMOHIRO
KINOSHITA KOICHI
MAEKAWA SHUNICHI
MORITA HIDEKI
NAGASAKI PREFECTURE
JAPAN RES DEV CORP
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