To solve a problem that the satisfaction of a high dielectric constant, a small leakage current and a temperature depending property for the same is required by a capacitance insulating film employed for the capacitor of a DRAM (dynamic random access memory).

A lower electrode 17 is formed in an opening unit 16 so that a TiN (titanium nitride) film on an interlayer silicon oxide film 15 remains in the opening unit 16 only and, subsequently, a lamination film of ZrXHf1-XO2 film (here; 0≤X≤1) 18 and a metal oxide film 19 containing Ti is employed as the capacitance insulating film, and residual carbon in the capacitance insulating film is removed by annealing in an oxidative atmosphere to form a capacitance film low in the leakage current in addition to the dielectric constant whereby the capacitor optimum for the DRAM is provided.