CHEMICAL-MECHANICAL POLISHING SLURRY AND ITS USING METHOD

Title:

CHEMICAL-MECHANICAL POLISHING SLURRY AND ITS USING METHOD

Document Type and Number:

Japanese Patent JP2005159269

Kind Code:

A

Abstract:

To prevent settlement of polishing particles, improve selectivity to a metal layer for TaN, and prevent dishing of copper.

The slurry contains composite polishing particles made up of a base particle selected from a group which is composed of SiO2, eO2, SiC, Fe2O2, TiO2, Si3N4, which are covered with alumina, and a mixture of them. The chemical-mechanical polishing method uses the slurry in polishing a semiconductor wafer surface.

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Inventors:

CHEN PAO CHENG
LEE TSUNG-HO
LIU WEN-CHENG

Application Number:

JP2004104351A

Publication Date:

June 16, 2005

Filing Date:

March 31, 2004

Export Citation:

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Assignee:

ETERNAL CHEMICAL CO LTD

International Classes:

B24B37/00; C09G1/02; C09K3/14; H01L21/302; H01L21/304; H01L21/321; H01L21/461; H01L21/768; (IPC1-7): H01L21/304; B24B37/00; C09K3/14

Attorney, Agent or Firm:

Alga Patent Office, a patent business corporation
Miyuki Ariga
Toshio Takano
Toshio Nakajima
Asano Yasutaka
Hiromi Matoba
Masaki Murata
Hiroto Yamamoto

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