To improve the sensitivity of a CMOS image sensor.
This image sensor has a plurality of pixel circuits PX each having a first transistor N2 controlled by a detection signal generated by a photoelectric converter PD in a pixel and a second transistor N3 connected to the first transistor and controlled by a selection line ROW, and a common amplifier circuit provided in common to the plurality of pixel circuits and having a third transistor N12 connected to the first transistor N2 in parallel and a current circuit for feeding current to the first and third transistors. The first transistor N2 in a pixel circuit selected by the selection line and the third transistor N12 in the common amplifier circuit constitute an amplifier circuit for amplifying the detection signal npd. The first transistor controlled by the detection signal in the pixel circuit and the third transistor in the common amplifier circuit provided in common to the plurality of pixel circuits constitute the amplifier circuit, and the detection signal in the pixel is directly amplified by the amplifier circuit. Then, sensitivity can be increased.
YAMAMOTO KATSUYOSHI
MIZUGUCHI TOSHITAKA
