Title:
COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2013138059
Kind Code:
A
Abstract:
To provide a composite substrate including a silicon substrate with few lattice defects.
The composite substrate includes an insulating substrate 50 and a semiconductor layer 31 which has one main surface joined to an upper surface of the substrate 50 and is made of silicon. A dopant concentration in the semiconductor layer 31 is small at an imaginary point nearer to the substrate than the other main surface.
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Inventors:
KITADA KATSUNOBU
OSAKI AKIHIRO
OSAKI AKIHIRO
Application Number:
JP2011287469A
Publication Date:
July 11, 2013
Filing Date:
December 28, 2011
Export Citation:
Assignee:
KYOCERA CORP
International Classes:
H01L21/20; H01L21/02; H01L27/12