Title:
COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR FORMING OHMIC ELECTRODE
Document Type and Number:
Japanese Patent JP2003179080
Kind Code:
A
Abstract:
To form a low resistance alloy ohmic electrode to a semiconductor layer containing an undoped In.
The method for forming the ohmic electrode comprises the steps of forming the ohmic electrode 7 in which a stable layer 8 and an Au layer 9 containing a predetermined element and suppressing the diffusion of an Au are sequentially laminated, on the ohmic contact semiconductor layer 6 doped with a dopant made of the predetermined element.
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Inventors:
ARAI TOMOYUKI
Application Number:
JP2001378098A
Publication Date:
June 27, 2003
Filing Date:
December 12, 2001
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/28; H01L21/338; H01L29/778; H01L29/812; (IPC1-7): H01L21/338; H01L21/28; H01L29/778; H01L29/812
Attorney, Agent or Firm:
Kiyoshi Manabe (3 people outside)