Title:
銅電着組成物及びこの組成物を用いた半導体基板の空洞の充填方法
Document Type and Number:
Japanese Patent JP2013536314
Kind Code:
A
Abstract:
The subject-matter of the present invention is a composition especially intended for filling, by the electroplating of copper, a cavity in a semiconductor substrate such as a "through-via" structure for the production of interconnects in three-dimensional integrated circuits. According to the invention, this composition comprises in solution in a solvent: copper ions in a concentration lying between 45 and 1500 mM; a complexing agent for the copper consisting of at least one compound chosen from aliphatic polyamines having 2 to 4 amino groups, preferably ethylenediamine, in a concentration lying between 45 and 3000 mM; the molar ratio between the copper and said complexing agent lying between 0.1 and 5; thiodiglycolic acid in a concentration lying between 1 and 500 mg/l; and optionally a buffer system, in particular ammonium sulfate, in a concentration lying between 0.1 and 3M.
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Inventors:
Frederik, Nadia
Reinal, Frederik
Gonzalez, Jose
Reinal, Frederik
Gonzalez, Jose
Application Number:
JP2013513697A
Publication Date:
September 19, 2013
Filing Date:
June 09, 2011
Export Citation:
Assignee:
Al-Smile
International Classes:
C25D3/38; C25D7/12; H01L21/288; H01L21/3205; H01L21/768; H01L23/522
Domestic Patent References:
| JP2009509045A | 2009-03-05 | |||
| JP2009527912A | 2009-07-30 | |||
| JP2007517140A | 2007-06-28 | |||
| JP2002004081A | 2002-01-09 | |||
| JP2001023989A | 2001-01-26 | |||
| JP2000195822A | 2000-07-14 |
Other References:
縄舟秀美 他４名: "ULSI配線形成を目的としたエチレンジアミン錯体浴からのボイドフリー銅の電析", 表面技術, vol. 51, no. 11, JPN6015008760, 1 November 2000 (2000-11-01), JP, pages 1142 - 1147, ISSN: 0003021115
Attorney, Agent or Firm:
Atomi International Patent Office