結晶成長装置および製造方法

Title:

結晶成長装置および製造方法

Document Type and Number:

Japanese Patent JP4878794

Kind Code:

B2

More Like This:

JP2009096695	METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL BODY
JP2009249199	APPARATUS FOR PRODUCING ALUMINUM NITRIDE SINGLE CRYSTAL
JP6481706	Manufacturing method of gallium nitride substrate and semiconductor device, and manufacturing method of gallium nitride layer bonding substrate

Inventors:

Shoji Sarayama
Hirokazu Iwata
Fuse Akihiro

Application Number:

JP2005231966A

Publication Date:

February 15, 2012

Filing Date:

August 10, 2005

Export Citation:

Assignee:

株式会社リコー

International Classes:

C30B29/38; C30B9/10

Domestic Patent References:

Foreign References:

WO2005103341A1

Attorney, Agent or Firm:

Hiroaki Sakai

Previous Patent: JPS4878793

Next Patent: JPS4878795