Title:
半導体用途のための結晶化処理
Document Type and Number:
Japanese Patent JP6847179
Kind Code:
B2
Abstract:
A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material.
More Like This:
| JP2002321999 | METHOD FOR MAKING SEMICONDUCTOR SUBSTRATE |
| JPS6242511 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
Inventors:
Moffat, Stephen
Application Number:
JP2019187413A
Publication Date:
March 24, 2021
Filing Date:
October 11, 2019
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/20; H01L21/268; H01L31/068; H01L31/075; H01L31/076; H01L31/18
Domestic Patent References:
| JP8064526A | ||||
| JP2008133182A | ||||
| JP2007227629A | ||||
| JP2006278746A | ||||
| JP2006086447A | ||||
| JP2001319891A | ||||
| JP2001035806A |
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation