Title:
ERROELECTRIC SUBSTANCE THIN FILM ELEMENT
Document Type and Number:
Japanese Patent JP3646363
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a thin film of pyroelectric substance suppressed in increase in dielectric constant and increased in only a pyroelectric coefficient.
SOLUTION: This erroelectric substance thin film element is orientated ≥90% in the c-axis of perovskite type structure of tetragonal system formed on a substrate and has ≥90% film density and the constitution of (c1-c0)/c0≤0.45% when the lattice constant of the c-axis of the erroelectric substance thin film is c1 and that of a bulk material having the same composition as that of the erroelectric substance is c0.
Inventors:
Takayuki Takeuchi
Nobuaki Nagao
Kenji Iijima
Nobuaki Nagao
Kenji Iijima
Application Number:
JP21583895A
Publication Date:
May 11, 2005
Filing Date:
August 24, 1995
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G01J1/02; C30B29/32; (IPC1-7): C30B29/32; G01J1/02
Domestic Patent References:
| JP63313023A |
Attorney, Agent or Firm:
Fumio Iwahashi
Tomoyasu Sakaguchi
Hiroki Naito
Tomoyasu Sakaguchi
Hiroki Naito
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