FERRODIELECTRIC MEMORY

Japanese Patent JPH03108770

A

PURPOSE: To eliminate reduction in residual polarization value even upon repeated reading and to effectively record and read information by forming a ferroelectric unit in a laminate in which a plurality of ferrodielectric films having different electric field resistances are laminated.

CONSTITUTION: In a ferroelectric memory having a stripelike lower electrode 12, a stripelike upper electrode 15 so disposed as to be perpendicular to the electrode 12, a ferrodielectric layer 14 disposed between the electrodes 12 and 15 for varying a polarized state by an electric field applied between the electrodes 12 and 15, the ferrodielectric unit 14 is formed in a laminate in which a plurality of ferroelectric films 14a, 14b having different electric field resistances are laminated. For example, a stripelike Al lower electrode 12 is formed on a glass board 11, an insulator 13 is filled between the electrodes 12, and the unit 14 made of a high electric field resistance ferrodielectric film 14a and a low electric field resistance ferrodielectric film 14b is formed on the electrode 12 and the insulator. The stripelike Al upper electrode 15 is formed on the unit 14.

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YOSHIMORI HIROYUKI
ADACHI HIDEO
WATANABE HITOSHI
YUSA ATSUSHI
FUNAZAKI JUN
OTA YOSHINORI
MIZUSAKI TAKASHI

JP24526189A

May 08, 1991

September 22, 1989

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OLYMPUS OPTICAL CO

G11C11/22; H01L21/8246; H01L21/8247; H01L27/105; H01L29/788; H01L29/792; (IPC1-7): G11C11/22; H01L29/788; H01L29/792

Atsushi Tsuboi (2 outside)

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