FERROELECTRIC THIN FILM ELEMENT

Title:

FERROELECTRIC THIN FILM ELEMENT

Document Type and Number:

Japanese Patent JP3545850

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a ferroelectric thin film element provided with electrode material wherein film characteristic fatigue and leak current generation are little and adhesion to ferroelectric material is excellent.
SOLUTION: In a ferroelectric thin film element provided with a ferroelectric thin film 5 having Bi based layer type perovskite crystal structure, an oxide electrode 4 containing Bi is used. Thereby the difference of work function of the interface of the ferroelectric material 5 and the electrode 4 is reduced, and generation of residual stress in the film which is caused by the difference of expansion coefficient between the ferroelectric material and the electrode is restrained.

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Inventors:

Hironori Matsunaga
Kiba Justice

Application Number:

JP23135395A

Publication Date:

July 21, 2004

Filing Date:

September 08, 1995

Export Citation:

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Assignee:

Sharp Corporation

International Classes:

H01G4/12; H01G4/33; H01L21/336; H01L21/8242; H01L21/8246; H01L21/8247; H01L27/10; H01L27/105; H01L27/108; H01L29/788; H01L29/792; H01L37/02; H01L41/18; H01L41/22; (IPC1-7): H01L21/8242; H01G4/12; H01G4/33; H01L21/8247; H01L27/10; H01L27/108; H01L29/788; H01L29/792; H01L37/02; H01L41/18; H01L41/22

Domestic Patent References:

JP621341A
JP793969A

Attorney, Agent or Firm:

Takaya Koike
Masaharu Kinoshita

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