FERROELECTRIC THIN FILM ELEMENT - MATSUSHITA ELECTRIC IND CO LTD

Title:

FERROELECTRIC THIN FILM ELEMENT

Document Type and Number:

Japanese Patent JPH08172224

Kind Code:

A

Abstract:

PURPOSE: To provide a ferroelectric thin film element having a small size and excellent characteristics by extremely reducing lattice defects in a crystal and improving electric characteristics in the film used for various thin film device element using a ceramic thin film.

CONSTITUTION: A ferroelectric thin film of an ABO3 type perovskite structure having a lattice defect by substituting the part of A site metal with the other metal of La, etc., between a platinum lower electrode 2 and a platinum upper electrode 4 formed on a MgO single-crystalline board 1 cleaved and mirror- polished in plane (100) and containing metallic ions such as Mn ions for compensating the defect is provided to obtain an excellent ferroelectric thin film element having small tanδ, a large pyroelectric coefficient and a relatively small specific dielectric constant.

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Inventors:

NAGAO NOBUAKI
TAKEUCHI TAKAYUKI
IIJIMA KENJI

Application Number:

JP31448494A

Publication Date:

July 02, 1996

Filing Date:

December 19, 1994

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

G01J1/02; C01G45/00; C30B29/22; C30B29/32; G01J5/02; G01J5/34; H01L21/8247; H01L29/788; H01L29/792; H01L37/02; (IPC1-7): H01L37/02; C01G45/00; C30B29/22; C30B29/32; H01L21/8247; H01L29/788; H01L29/792

Attorney, Agent or Firm:

Akira Kobiji (2 outside)

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