Title:
強誘電体薄膜およびその製造方法
Document Type and Number:
Japanese Patent JP3999300
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the decline of the spontaneous polarization value of a ferroelectric thin film, particularly, a PbTiO3 ferroelectric thin film, when the thin film is formed on a single-crystal Si substrate by controlling stresses in the thin film. SOLUTION: A ferroelectric thin film is made of an epitaxial ferroelectric thin film, formed on a single-crystal Si substrate and, of crystal faces of the thin film, set a crystal face parallel to the crystal face of the single-crystal substrate as ZF face, the distance between crystalline faces ZF and the distance ZFO between the crystalline faces ZF when the constituent of the thin film is in a bulk state are adjusted, so that a relation, 0.980<=ZF/ZFO<=1.010, is established among them.
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Inventors:
Yoshihiko Yano
Takao Noguchi
Takao Noguchi
Application Number:
JP3980297A
Publication Date:
October 31, 2007
Filing Date:
February 07, 1997
Export Citation:
Assignee:
tdk Corporation
International Classes:
C30B29/32; H01G4/33; H01G7/06; H01L21/8242; H01L21/8246; H01L21/8247; H01L27/10; H01L27/105; H01L27/108; H01L27/14; H01L29/788; H01L29/792; H01L37/02
Domestic Patent References:
| JP6097452A | ||||
| JP3193302B2 | ||||
| JP60161635A | ||||
| JP63055198A | ||||
| JP8139292A |
Other References:
S. MATSUBARA et al.,Epitaxial growth of PbTiO3 on MgAl2O4/Si substrates,Japanese Journal of Applied Physics,1985年,Vol.24 Supplement 24-3,p.10-12
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Hiroaki Aoki
Shiro Terasaki
Hiroaki Aoki