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Title:
FET DRIVING CIRCUIT
Document Type and Number:
Japanese Patent JPS6425619
Kind Code:
A
Abstract:

PURPOSE: To prevent a FET element from being destructed due to the FET source potential fluctuation at turn-on, turn-off by making the ground of a FET driving circuit equipotential to the source of the FET and isolating the power supply from ground.

CONSTITUTION: A transistor TR1 is operated by an input signal and connected to ground, then a transistor(TR)2 is operated. A current starts flowing to a field effect TR FET and a voltage of an inductance L is generated. The collector current of the TR2 is increased and the TR2 transits from the active region to the saturation region. The gate voltage of the field effect TR FET reaches the voltage VCC charged in the capacitor C1. The current in the field effect TR FET is made constant and the voltage of the inductance L is made constant and stable.


Inventors:
NOTO YASUO
Application Number:
JP18104987A
Publication Date:
January 27, 1989
Filing Date:
July 22, 1987
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H03K17/695; H03K17/04; H03K17/08; H03K17/56; H03K17/567; H03K17/687; (IPC1-7): H03K17/04; H03K17/08; H03K17/56; H03K17/687
Attorney, Agent or Firm:
Katsuo Ogawa



 
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