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Title:
FIELD EFFECT TRANSISTOR HAVING GERMANIUM NANO-ROD AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2008277814
Kind Code:
A
Abstract:

To provide a field effect transistor having a germanium nano-rod and a method of manufacturing the field effect transistor.

The field effect transistor is characterized by a gate oxide formed on a substrate, at least one germanium nano-rod embedded in the gate oxide with its both ends exposed, a source electrode and a drain electrode connected to both ends of the germanium nano-rod, respectively, and a gate electrode formed on the gate oxide between the source electrode and the drain electrode.


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Inventors:
MOON CHANG-WOOK
DEN JUSHAKU
RI SHOKEN
LEE NAE-IN
PARK YEON-SIK
RHEE HWA-SUNG
LEE HO
CHO SEEI
KIM SUK-PIL
Application Number:
JP2008109493A
Publication Date:
November 13, 2008
Filing Date:
April 18, 2008
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L29/786; H01L21/28; H01L21/336
Domestic Patent References:
JP2008543103A2008-11-27
JP2006270107A2006-10-05
JP2006237313A2006-09-07
JP2008543103A2008-11-27
JP2006270107A2006-10-05
Foreign References:
WO2006108987A12006-10-19
WO2006131615A12006-12-14
WO2006108987A12006-10-19
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro



 
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