To provide a film forming apparatus capable of improving in-plane uniformity of film thickness and enhancing reaction efficiency, thereby increasing film forming speed.

The film forming apparatus for forming a thin film on a surface of a workpiece W using a raw material gas of an organometallic compound is equipped with: a processing container 22 from which evacuation can be conducted; a placing table 28 on which a heater 34 is provided; and a gas introduction means 80 that is disposed facing the mount and has a plurality of decomposition promoting gas introduction holes 80A that are disposed facing the workpiece placed on the placing table so as to introduce a decomposition promoting gas for promoting decomposition of the raw material gas and raw material gas introduction holes 80B disposed surrounding an area wherein the plurality of decomposition promoting gas introduction holes 80A are formed so as to introduce the raw material gas. This improves in-plane uniformity of film thickness and improves reaction efficiency, thereby increasing film formation speed.