FORMATION OF CRYSTALLINE SILICON

Title:

FORMATION OF CRYSTALLINE SILICON

Document Type and Number:

Japanese Patent JP3630450

Kind Code:

B2

Abstract:

PURPOSE: To obtain a method of forming crystalline silicon which gives film of high quality through easy and safe film-forming operations in excellent economy.
CONSTITUTION: This method is to form crystalline silicon on the surface of the base plate by the light-excited vapor phase-growth process in which disilane and a halogenated monosilane such as silane chloride or silane fluoride and hydrogen are used as starting gases and an ArF excimer laser is used as a source of exciting light to effect the epitaxial growth of silicon in the temperature zone from 200°C to 450°C and the deposition of polycrystalline silicon.

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Inventors:

Naoki Inoue
Shigeru Morikawa
Tsuyoshi Takagi

Application Number:

JP22177894A

Publication Date:

March 16, 2005

Filing Date:

September 16, 1994

Export Citation:

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Assignee:

OSAKA GAS CO.,LTD.

International Classes:

C30B28/14; C30B29/06; H01L21/205; (IPC1-7): C30B29/06; C30B28/14; H01L21/205

Domestic Patent References:

JP62076612A
JP62078191A
JP2244613A
JP62288194A
JP2225399A
JP4011516B2

Other References:

Takayuki OSHIMA et al.,Effects of SiH2Cl2 on low-temperature (<200°C) Si epitaxy by photochemical vapor deposition,Applied Surface Science,1994年 5月 2日,Vols.79/80,pp.215-219

Attorney, Agent or Firm:

Shuichiro Kitamura

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