PURPOSE: To improve the dry etching resistance of a film by polymerizing fluoroalkyl acrylate in an inert gas excited by glow discharge.
CONSTITUTION: Fluoroalkyl acrylate represented by formula RfR2OCOCR1=CH2 (where Rf is 1W15 C perfluoroalkyl or a group having at least 1 fluorine atom, R1 is H, methyl, ethyl or halogen, and R2 is a bivalent hydrocarbon residue) is put in a container 8 and fed to a vacuum vessel 1 evacuated with a vacuum pump 11 through a trap 10. Ar is fed from an inert gas container 2 and excited by passing through a glow discharge zone formed with a dielectric coil 4. The acrylate joins the excited Ar and contacts with a substrate (not shown) on a sample holder 9 to form a polymer film. This film is superior as a resist to a film obtd. by coating a polymer.
MORITA SHINZOU
FUJII TSUNEO
| JPS55129345A | 1980-10-07 | |||
| JPS53135336A | 1978-11-25 | |||
| JPS53120527A | 1978-10-21 | |||
| JPS54145127A | 1979-11-13 |
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