FIELD-EFFECT TRANSISTOR

Title:

FIELD-EFFECT TRANSISTOR

Document Type and Number:

Japanese Patent JP3123589

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a field-effect transistor having a high gate breakdown voltage without limiting drain current.
SOLUTION: In a field-effect transistor, a GaAs cap layer 57 formed on a GaAs substrate 51, on which a source electrode 58 and a drain electrode 59 are formed over is surface, is etched and a recess 60 is formed, and a gate electrode is buried in an exposed undoped AlGaAs layer 56, the length of a portion in gate length direction buried in an undoped AlGaAs layer 56 of a gate electrode 11 is made smaller as the depth increases by providing a slope at the drain electrode side.

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Inventors:

Yasuhiro Okamoto
Naotaka Iwata

Application Number:

JP26176695A

Publication Date:

January 15, 2001

Filing Date:

October 09, 1995

Export Citation:

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Assignee:

NEC

International Classes:

H01L29/812; H01L21/338; H01L29/778; (IPC1-7): H01L29/778; H01L21/338; H01L29/812

Domestic Patent References:

JP6151468A
JP6177162A

Attorney, Agent or Firm:

Yosuke Goto (1 person outside)

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