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Title:
GRINDING METHOD OF WAFER
Document Type and Number:
Japanese Patent JP2021044330
Kind Code:
A
Abstract:
To provide a grinding method of a wafer that is capable of reducing the thickness variations of the wafer on which an orientation flat is formed.SOLUTION: In a grinding method of a wafer in which the wafer on which an orientation flat for indicating crystal orientation is formed is held on a holding surface of a chuck table to be ground, the chuck table comprises a suction part that has a first notch part corresponding to the orientation flat and sucks the wafer, and a frame part that has a second notch part surrounding the suction part and fitted along the first notch part. The grinding method of a wafer includes: a holding-surface-grinding step of rotating the chuck table and a grinding wheel having a grindstone to grind the holding surface formed by an upper face of the suction part and an upper face of the frame part with the grindstone; and a wafer-grinding step of grinding, with the grindstone, the wafer held on the holding surface that has been ground by the grindstone.SELECTED DRAWING: Figure 1

Inventors:
GOKITA YOHEI
Application Number:
JP2019164154A
Publication Date:
March 18, 2021
Filing Date:
September 10, 2019
Export Citation:
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Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/304; B24B7/22; B24B41/06
Domestic Patent References:
JP2013094913A2013-05-20
JP2018069348A2018-05-10
JP2008060470A2008-03-13
JP2012134275A2012-07-12
JP2018114563A2018-07-26
JP2019136806A2019-08-22
JP2016132071A2016-07-25
Attorney, Agent or Firm:
Akira Matsumoto
Tomohiro Okamoto
Kasahara Takahiro
Ei Okamoto
Takayuki Okano