Title:
熱処理方法および熱処理装置
Document Type and Number:
Japanese Patent JP7278111
Kind Code:
B2
Abstract:
A silicon semiconductor wafer is transported into a chamber, and preheating of the semiconductor wafer is started in a nitrogen atmosphere by irradiation with light from halogen lamps. When the temperature of the semiconductor wafer reaches a predetermined switching temperature in the course of the preheating, oxygen gas is supplied into the chamber to change the atmosphere within the chamber from the nitrogen atmosphere to an oxygen atmosphere. Thereafter, a front surface of the semiconductor wafer is heated for an extremely short time period by flash irradiation. Oxidation is suppressed when the temperature of the semiconductor wafer is relatively low below the switching temperature, and is caused after the temperature of the semiconductor wafer becomes relatively high. As a result, a dense, thin oxide film having good properties with fewer defects at an interface with a silicon base layer is formed on the front surface of the semiconductor wafer.
Inventors:
Akira Ueda
Kazuhiko Fuse
Kazuhiko Fuse
Application Number:
JP2019042443A
Publication Date:
May 19, 2023
Filing Date:
March 08, 2019
Export Citation:
Assignee:
Screen Holdings Co., Ltd.
International Classes:
H01L21/316; H01L21/26; H01L21/31
Domestic Patent References:
| JP2005019650A | ||||
| JP2009272402A | ||||
| JP2018137378A | ||||
| JP2006294750A | ||||
| JP2013207033A | ||||
| JP2013084902A | ||||
| JP11186248A | ||||
| JP10032328A |
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita
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