To provide a small-size high frequency capacitor which ensures high frequency characteristics through low ESL (equivalent series inductance) and can also be manufactured at a low cost.

The high frequency capacitor comprises a first electrode 10 which is also used as a base substrate; a second electrode 13 provided on an oxide film layer 12 of dielectric substance formed on the surface of the first electrode 10; and terminal electrodes 14, 15 respectively connected to a terminal electrode conductive part 11 of the first electrode 10 and a terminal electrode conductive part 17 of the second electrode 13, and extracted from the surface of second electrode 13. The surface of the substrate is converted to the anode and the oxide film layer of the dielectric substance (Al2O3) 12 can be obtained easily, and the capacitor can also be attained, in which the substrate, first electrode 10 and oxide film layer 12 of the dielectric substance are integrated.