Title:
ホットエレクトロン・トランジスタ
Document Type and Number:
Japanese Patent JP2007535178
Kind Code:
A
Abstract:
A hot electron transistor (450) includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode.
Inventors:
Estes, Michael, Jay
Eliasson, Blake, Jay
Eliasson, Blake, Jay
Application Number:
JP2007510882A
Publication Date:
November 29, 2007
Filing Date:
April 25, 2005
Export Citation:
Assignee:
The Regents of the University of Colorado
International Classes:
H01L29/68; H01L21/00; H01L29/06; H01L29/08; H01L29/76; H01L29/82; H01L39/00; H01L27/082
Attorney, Agent or Firm:
Tadahiko Ito
Shinsuke Onuki
Tadashige Ito
Shinsuke Onuki
Tadashige Ito