Title:
半導体層構造の成長方法
Document Type and Number:
Japanese Patent JP4485510
Kind Code:
B2
Abstract:
A method of growing a semiconductor layer structure comprises growing a first semiconductor layer and incorporating hydrogen into the first semiconductor layer. One or more further semiconductor layers are then grown over the first semiconductor layer to form a semiconductor layer structure. A selected portion of the first semiconductor layer is then annealed so as to change the electrical resistance of the selected portion of the first semiconductor layer. The electrical resistance of the one or more further semiconductor layers that have been grown over the first semiconductor layer is not significantly changed by the annealing step. The invention may be used, for example, to create a current aperture in a semiconductor layer within a semiconductor layer structure.
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Inventors:
Matias cower
Application Number:
JP2006307124A
Publication Date:
June 23, 2010
Filing Date:
November 13, 2006
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L33/14; H01L21/205; H01L21/268; H01L33/00; H01L33/30; H01S5/183; H01L33/10; H01L33/46
Domestic Patent References:
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| JP2000031600A | ||||
| JP8264830A | ||||
| JP11074557A | ||||
| JP2002353144A | ||||
| JP55166975A | ||||
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| JP8228025A | ||||
| JP61274386A | ||||
| JP63292687A | ||||
| JP10004211A | ||||
| JP2005136418A |
Attorney, Agent or Firm:
Kenzo Hara International Patent Office