PURPOSE: To enable the hole element to be separated without deteriorating the high sensitivity characteristics by a method wherein the line width on the substrate surface of a dicing line for separation existent around the hole element is difer-rentiated in the mutually orthogonal directions.
CONSTITUTION: Dicing line (107) for individually separating the element is formed on an SiO2 film (105) covering the surface of wafer as the element in the mutually orthogonal <0 bar 11> and <0 bar 1 bar 1> crystalline axial direction. The line width of the dicing line (107) makes the difference in the depth of an etching trench depending upon the difference in the crystalline axial direction so that the difference in the depth may be intentionally fluctuated by crystalline axis. That is, the area occupied by the cutting allowance region (106) for element separation is fluctuated in the mutually orthogonal directions so that the development factor of defective appearance of chipped element may be reduced thereby enabling the individual separation to be attained without deteriorating the excellent characteristics of GaInAs hole element.
YOSHIUJI TOSHIKI
UDAGAWA TAKASHI
USUDA MASAHIKO
TAKEUCHI RYOICHI
MATSUZAWA KEIICHI
MITANI KAZUHIRO
